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Question

A p-n photodiode is fabricated with a semiconductor having band gap of 3 ev, then

A
It can detect λ=500 nm
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B
It cannot detect λ=300 nm
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C
It can detect λ=240 nm
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D
It cannot detect λ=400 nm
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Solution

The correct option is C It can detect λ=240 nm
1242λ>3λ<12423λ<414 nmλmax=414 nm
It can detect all λ which are less than 414 nm.

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