Question

In which of the following doped semiconductors majority of charge carriers are holes?

• A. Antimony doped with germanium
• B. Boron doped with silicon
• C. Arsenic doped with silicon
• D. Phosphorus doped with germanium

Answer 1

The correct option is B Boron doped with silicon

When a germanium or silicon semiconductor is doped with a group 13 element, then a p-type semiconductor, having more number of holes as majority carriers, is formed. Whereas when a germanium or silicon semiconductor is doped with a group 15 element, then a n-type semiconductor, having more number of electrons as majority carriers, is formed.

As we know, boron is a group 13 element. Hence doping boron in silicon will form a p-type semiconductor with majority of charge carriers as holes.