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Byju's Answer
Standard XII
Chemistry
Solubility Product
pure Si at 30...
Question
pure Si at 300 K has hole and electron densitie
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Q.
Pure Si at
300
K
has equal electron
(
n
e
)
and hole
(
n
h
)
concentrations of
1.5
×
10
16
m
−
3
. Doping by indium increases
n
h
to
4.5
×
10
22
m
−
3
. Calculate
n
e
in the doped Si.
Q.
Pure Si at
300
K
has equal electron and hole concentration of
1.5
×
10
16
/
m
3
. Doping by indium increases
n
h
to
4.5
×
10
22
/
m
3
. What is
n
e
in doped silicon?
Q.
Pure
S
i
at
500
K
has equal number of electron
(
n
e
)
and hole
(
n
h
)
concentration of
1.5
×
10
16
m
−
3
. Doping by indium increases
n
h
to
4.5
×
10
22
m
−
3
. The doped semiconductor is of
Q.
Pure Si at
500
K
has equal number of electrons
(
n
e
)
and hole
(
n
h
)
concentrations of
1
.
5
×
10
16
m
−
3
. Doping by indium increases
n
h
t
o
4
.
5
×
10
22
m
−
3
. The doped semiconductor is of :
Q.
Pure water has the maximum density at
4
∘
C
.
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