Question

# The dominant mechanisms for motion of charge carriers in forward and reversed biased silicon p-n junctions are :

A
Diffusion in forward bias, drift in reverse bias
B
Diffusion in both forward and reverse bias
C
Drift in both forward and reverse bias
D
None of these

Solution

## The correct option is A Diffusion in forward bias, drift in reverse bias$$\Rightarrow$$ In forward bias we apply voltage in a direction opposite to that of barrier potential p-side to positive terminal,       n-side to negative terminal of battery. So electrons in the n-side, holes in p side pushed towards the junction. Results in increased diffusion.$$\Rightarrow$$ In reverse bias, electrons in n-side, holes in p-side pushed away from function.Ref. imagen-side to positive terminal p-side to negative terminal.Physics

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