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Question

The dominant mechanisms for motion of charge carriers in forward and reversed biased silicon p-n junctions are :


A
Diffusion in forward bias, drift in reverse bias
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B
Diffusion in both forward and reverse bias
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C
Drift in both forward and reverse bias
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D
None of these
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Solution

The correct option is A Diffusion in forward bias, drift in reverse bias
$$\Rightarrow $$ In forward bias we apply voltage in a direction opposite to that of barrier potential p-side to positive terminal,       n-side to negative terminal of battery. So electrons in the n-side, holes in p side pushed towards the junction. Results in increased diffusion.
$$\Rightarrow $$ In reverse bias, electrons in n-side, holes in p-side pushed away from function.
Ref. image

n-side to positive terminal p-side to negative terminal.

Physics

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