Energy Band Diagrams

Q. Pure Si at $300K$ has equal electron and hole concentration of $1.5\times {10}^{16}/m^3$. Doping by indium increases $n_h$ to $4.5\times {10}^{22}/m^3$. What is $n_e$ in doped silicon?

1. $5\times {10}^9/m^3$
2. $1.5\times {10}^{16}/m^3$
3. $4.5\times {10}^{22}/m^3$
4. $4.5\times {10}^{16}/m^3$

Q. define ionisation enthalpy

Q. The relation between number of free electrons (n) is a semiconductor and temperature (T) is given by

1. n $\alpha$ T
2. n $\alpha$ $T^2$
3. n $\alpha$ $\sqrt{T}$
4. n $\alpha$ $T^{\frac{3}{2}}$

Q. Potential energy of a particle of mass 2 kg of plating on x-axis is given by U=(k-x)^2-10 the total energy of oscillation is 26 find the maximum speed of particle Why here (k-x)^2 is taken kE

Q. define seven basi SI units

Q. Pure Si at $300K$ has equal electron and hole concentration of $1.5\times {10}^{16}/m^3$. Doping by indium increases $n_h$ to $4.5\times {10}^{22}/m^3$. What is $n_e$ in doped silicon?

1. $5\times {10}^9/m^3$
2. $1.5\times {10}^{16}/m^3$
3. $4.5\times {10}^{22}/m^3$
4. $4.5\times {10}^{16}/m^3$