A bipolar transistor shown in figure has current gain - 40 and-over drive factor 5- The load resistance RC-10- dc supply voltage VCC-130 V and input voltage to base circult- VB- 10 V- For VCES-1-0 V and VBES-1-5 V- forward current gain is-

For operation in the saturated state, I_CS=V_CC V_CESR_C=130 110=12.9 A Base current that produces saturation I_BS=I_CSβ=12.9040=0.3225 A I_B=I_BS× ODF =0.3225× ...

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Standard XII

Physics

Full Wave Rectifier

A bipolar tra...

Question

A bipolar transistor shown in figure has current gain $β = 40$ and-over drive factor 5. The load resistance $R_{C} = 10 Ω$ , dc supply voltage $V_{C C} = 130 V$ and input voltage to base circult, $V_{B} = 10 V . For V_{C E S} = 1.0 V a n d V_{B E S} = 1.5 V,$ forward current gain is____.

8

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Solution

The correct option is A 8
For operation in the saturated state,
$I_{C S} = \frac{V_{C C} - V_{C E S}}{R_{C}} = \frac{130 - 1}{10} = 12.9 A$
Base current that produces saturation
$I_{B S} = \frac{I_{C S}}{β} = \frac{12.90}{40} = 0.3225 A$
$I_{B} = I_{B S} \times O D F$
$= 0.3225 \times 5 = 1.6125 A$
Forward current gain $β_{f} = \frac{I_{C S}}{I_{B}} = \frac{12.90}{1.6125} = 8$

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A bipolar transistor shown in figure has current gain β=40 and-over drive factor 5. The load resistance RC=10Ω, dc supply voltage VCC=130V and input voltage to base circult, VB=10V. For VCES=1.0Vand VBES=1.5V, forward current gain is____. 8

The correct option is A 8For operation in the saturated state, ICS=VCC−VCESRC=130−110=12.9A Base current that produces saturation IBS=ICSβ=12.9040=0.3225A IB=IBS×ODF =0.3225×5=1.6125A Forward current gain βf=ICSIB=12.901.6125=8

A bipolar transistor shown in figure has current gain $β = 40$ and-over drive factor 5. The load resistance $R_{C} = 10 Ω$ , dc supply voltage $V_{C C} = 130 V$ and input voltage to base circult, $V_{B} = 10 V . For V_{C E S} = 1.0 V a n d V_{B E S} = 1.5 V,$ forward current gain is____.

8