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Question

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6×1016/m3. If the donor concentration level is 0.48×1020/m3, then the concentration of holes in the semiconductor is:

A
5.3×1012/m3
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B
4×1011/m3
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C
4×1012/m3
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D
5.3×1011/m3
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