A small concentration of minority carriers is injected into a homogeneous semiconductor crystal at one point. An electric field of $10 V / c m$ is applied across the crystal and this moves the minority carriers a distance of $1 c m$ in $20 μ s e c$ . The mobility $(i n c m^{2} / V - s e c)$ will be

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Solution

Ans : (c)

$Velocity = \frac{Distance}{Time}$
$v_{d} = \frac{1}{20 \times 10^{- 6}} = 50, 000 c m / s e c$
Drift velocity = $v_{d} = μ E$
Where
$μ =$ Mobility
$E =$ Electric field
$μ = \frac{v_{d}}{E} = \frac{50, 000}{10} = 5, 000 c m^{2} / v o l t - s e c$

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