Since, Resistance change due to applied strain is given by
(ΔR)ϵ=R×G×ϵ
and Resistance change due to temperature change is given by
(ΔR)T=R×α×ΔT
Now ΔT is the temperature rise due to the electrical power dissipation which is given as,
PD=i2R Watt
Since 25mW→1∘C rise in temperature
1mW→125×10−3 ∘C rise in temperature
i2R→i2R25×10−3 ∘C rise in temperature
There, ΔT=i2R25×10−3 ∘C
So,From equation (ii) (ΔR)T=R×α×i2R25×10−3
Now, according to condition given in problem
(ΔR)T≤(ΔR)ϵ=1 micron
Therefore,
R×α×i2R25×10−3≤R×G×ϵ|ϵ=1 micron
i≤√25×10−3×G×ϵαR
i≤√25×10−3×2.5×10−60.004×1000
i≤125μA