An N-type semiconductor strain gage has a nominal resistance of 1000Ω and gauge factor of -100. The resistance of the gauge, when compressive strain 100μm/m is applied, is
A
900Ω
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B
990Ω
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C
1010Ω
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D
1100Ω
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Solution
The correct option is C1010Ω Gf=ΔR|Rϵ
Given that, Gf=−100
R=1000Ω
ϵ=−100μm/m=−100×10−6m/m
−100=ΔR/1000−100×10−6
ΔR=10
∴ Resistance of gauge =R+ΔR=1000+10 =1010Ω
Note : It can be observed that for senicondoctor strain gauges, sensitivity is very high i.e, for 100 μm/m strain, change in resistance is 10 Ω.