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Question

An N-type semiconductor strain gage has a nominal resistance of 1000Ω and gauge factor of -100. The resistance of the gauge, when compressive strain 100μm/m is applied, is

A
900Ω
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B
990Ω
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C
1010Ω
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D
1100Ω
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Solution

The correct option is C 1010Ω
Gf=ΔR|Rϵ

Given that,
Gf=100

R=1000Ω

ϵ=100 μm/m=100×106m/m

100=ΔR/1000100×106

ΔR=10

Resistance of gauge
=R+ΔR=1000+10
=1010Ω

Note : It can be observed that for senicondoctor strain gauges, sensitivity is very high i.e, for 100 μm/m strain, change in resistance is 10 Ω.

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