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Question

An N-type semiconductor strain gauge having nominal resistance of 1000Ω and a gauge factor of -200 is subjected to a compressive strain of 500 microstrain. The new value of the resistance of the strain gauge is:

A
1010Ω
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B
1100Ω
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C
990Ω
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D
900Ω
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Solution

The correct option is B 1100Ω
Change in resistance of the gauge is given by

ΔR=R×G×ϵ

ΔR=100×(200)×500×106

[ Strain is taken negative because it is compressive]

ΔR=100Ω

Since the given strain gauge is N-type semiconductor strain gauge hence it's resistance get increases due to compressive strain.

R=R+ΔR=1000+100=1100Ω

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