The correct option is A 0
Given circuit NMOS has
Vth=+1V
Gate voltage, VG=2V
Source voltage, Vs=0V
So, VGS=2−0=2V
Also, VDS(sat)=VGS−Vth
=2−1=1V
Since 10 V is applied across drain-source terminal,
VDS>VDS(sat)
NMOS operates in saturation; channel conductivity is high and high current flows through drain to source and it acts as short circuit.
∴Vab=0