Barrier potential of a p-n junction diode does not depend on -

diode design

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temperature

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forward bias

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doping density

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Solution

The correct option is B diode design
Barrier potential does not depends on diode design while barrier potential depends upon temperature, doping density, and forward biasing.

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Similar questions

In a forward biased p – n junction diode, the potential barrier in the depletion region is of the form

(A)

(B)

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