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Question
Can we take one slab of p-type semiconductor and physically join it to another n-type semiconductor to get p-n junction?
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Solution
No, the key to semiconductors is maintaining pristine interfaces.
Physically putting together n and p type semiconductors would produce an uncontrolled interface.
Remember that the p an n type doping are measured in parts per million.
There are one million silicon atoms for every dopant atom.
Physical welding of semiconductors would produce interface defects in the parts per thousand.
That’s one thousand times larger than the dopants!
Growing an n type semiconductor on a p type semiconductor in ultra high vacuum
is the only way to “put together” p and n type materials.
The other method is to introduce the dopant into a pure semiconductor with diffusion or ion implantation.
No, the key to semiconductors is maintaining pristine interfaces.
Physically putting together n and p type semiconductors would produce an uncontrolled interface.
Remember that the p an n type doping are measured in parts per million.
There are one million silicon atoms for every dopant atom.
Physical welding of semiconductors would produce interface defects in the parts per thousand.
That’s one thousand times larger than the dopants!
Growing an n type semiconductor on a p type semiconductor in ultra high vacuum
is the only way to “put together” p and n type materials.
The other method is to introduce the dopant into a pure semiconductor with diffusion or ion implantation.
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