Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of
VGS and
VDS Given,
gm=0.5 μA/V for
VDS=50mV and
VGS=2V,gd=8μA/V for
VGS=2V and
VDS=0V,
where
gm=δIDδVGS and
gd=δIDδVDS
The threshold voltage (in volts) of the transistor is
- 1.2