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Question

Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of VGS and VDS Given,
gm=0.5 μA/V for VDS=50mV and VGS=2V,gd=8μA/V for VGS=2V and VDS=0V,
where gm=δIDδVGS and gd=δIDδVDS
The threshold voltage (in volts) of the transistor is
  1. 1.2

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Solution

The correct option is A 1.2
Since VGS>VDS, MOSFET is in linear operation
ID=KN[VGSVT]VDS
dIDdVGS=KNVDS
gm=KNVDS
0.5×106=KN[50×103] KN=105
ID=KN[VGSVT]VDS
dIDdVDS=KN[VGSVT]
gd=KN[VGSVT]
8×106=105[2VT]
On solving VT=1.2V

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