Consider a silicon p-n junction at room temperature having the following parameters-Doping on the n-side - 1 - 1017 cm-3Depletion width on the n-side - 0-1 - mDepletion width on the p-side - 1-0 - mIntrinsic carrier concentration - 1-4 - 1010 cm-3Thermal voltage - 26 mVPermittivity of free space - 8-85- 10-14F-cm-1Dielectric constant of silicon - 12The built-in potential of the junction

Ans : (b) N side is heavily doped W_N = ( 2ϵ V_jeN_D )^1/2 V_j = eN_D. W^2_N2ϵ _0ϵ _r≅ 0.76 Volts ...

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Breakdown Mechanism

Consider a si...

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Consider a silicon p-n junction at room temperature having the following parameters:
Doping on the n-side = $1 \times 10^{17} c m^{- 3}$
Depletion width on the n-side = $0.1 μ m$
Depletion width on the p-side = $1.0 μ m$
Intrinsic carrier concentration = $1.4 \times 10^{10} c m^{- 3}$
Thermal voltage = $26 m V$
Permittivity of free space = $8.85 \times 10^{- 14} F - c m^{- 1}$
Dielectric constant of silicon = 12
The built-in potential of the junction

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1 \times 10^{17} c m^{- 3}

0.1 μ m

1.0 μ m

1.4 \times 10^{10} c m^{- 3}

26 m V

8.85 \times 10^{- 14} F - c m^{- 1}

10^{17} c m^{- 3}

10^{16} c m^{- 3}

k T / q = 26 m V, n_{i} = 1.5 \times 10^{10} c m^{- 3}, ϵ_{S i} = 12 ε_{0}, ε_{0} = 8.85 \times 10^{- 14} F / c m

q = 1.6 \times 10^{- 19} C

n C c m^{- 2}

1 \times 10^{16} c m^{- 3}

1 \times 10^{17} c m^{- 3}

0.3 V

T = 300 K

n_{i} = 1.5 \times 10^{10} c m^{- 3}

\frac{k T}{q} = 26 m V

P^{+} n

μ m

P - n^{+}

8 μ m

P^{+} - n

Assume, donor concentration N_{D} = 4 \times 10^{16} c m^{- 3}

1 \times 10^{6} c m^{- 3}

5 \times 10^{18} c m^{- 3}

n_{i} = 1.5 \times 10^{10} c m^{- 3}

300 K, \frac{k T}{q} = 26 m V

ϵ_{S i} = 1.04 \times 10^{- 12} F / c m

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