Consider an n-channel metal oxide semiconductor field effect transistor MOSFET with a gate-to- source voltage of 1-8 V- Assume that WL - 4 - -n Cox - 70 - 10-6 AV-2- the threshold voltage is 0-3V- and the channel length modulation parameter is 0-09 V-1- In the saturation region- the drain conductance in micro Siemens is

In the saturation region, g_d= λ I_DS =λ [ 12μ _n C_oxwL(V_GS V_T)^2 ] = 0.09 [ 12× 70× 10^ 6× 4(1.8 0.3)^2 ] g_d= 28.35 μ S ...

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Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to- source voltage of $1.8 V$ . Assume that $\frac{W}{L} = 4, μ_{n} C_{o x} = 70 \times 10^{- 6} A V^{- 2}$ , the threshold voltage is $0.3 V$ , and the channel length modulation parameter is $0.09 V^{- 1}$ . In the saturation region, the drain conductance (in micro Siemens) is
28.35

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W

L

μ_{n}

C_{o x}

V_{G S} = 0.7 V

V_{D S} = 0.1 V, (μ_{n} C_{o x}) = 100 μ A / V_{2}

V_{T h} = 0.3 V

(W / L) = 50,

g_{m} (i n m A / V)

1 m A

6 V

1.02 m A

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V^{- 1})

g_{d s}

(λ)

(V_{G S}),

(I_{D})

V_{D S} = 4 V a n d 2.5 m A f o r V_{D S} = 8 V .

λ

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λ

k_{n} = \frac{{k^{'}}_{n}}{2} (\frac{W}{L}) = 20 μ A / V^{2} .

λ

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