(a) Characteristic Curves: The circuit diagram for determining the static characteristic curves of an n-p-n transistor in common-emitter configuration is shown infigure.
Common Emitter Characteristics:
(i)Input characteristics: These characteristic curves are obtained by plotting base current (IB) versus base-emitter voltage VBE for fixed collector-emitter voltage VCE. Fig. represents these characteristics.
(ii) Output characteristics: These characteristics are obtained by plotting collector current IC versus collector-emitter voltage VCE at a fixed value of base current IB . The base current is changed to some other fixed value and the observations of IC versus VCE are repeated. Fig. represents the output characteristics of a common-emitter circuit. Input Resistance. It is the ratio of change in base-emitter voltage (ΔVBE) to the corresponding change in base current (ΔIB) at constant collector-emitter voltage VCE i. e,.
ri=△VBE△IB VCE=constant
The input resistance of a common emitter circuit is of the order of a few hundred ohms.
Current amplification factors of a transistor (α and β):
The current gain a is defined as the ratio of change in collector current to the change in emitter current for constant value of collector voltage in common base configuration i.e.,
α=(△IC△IE) VC=constant (i)
Practical value of a ranges from 0.9to0.99 for junction transistor. The current gain α is defined as the ratio of change in collector current to the change in base current for constant value of collector voltage in common emitter configuration i. e.,
β=(△IC△IB) VC=constant (ii)
The value of β ranges from 20 to 200. The current gains α and β are related as