Estimate the proportion of boron impurity which will increase the conductivity of a pure silicon sample by a factor of 100. Assume that each boron atom creates a hole and the concentration of holes in pure silicon at the same temperature is 7×1015 holes per cubic metre. Density of silicon is 5×1028 atoms per cubic metre.
Total number of charge carriers initially
=2×7×1015
=14×1015/Cubic meter
Finally the total number of charge carriers
=14×1017/m3
We know the product of the concentrations of holes and conduction electrons remains almost the same.
Let 'x' be the number of holes.
So, (7×1015)×(7×1015)
=x×(14×1017−x)
⇒ 14x×1017−x2=49×1030
⇒ x2−14x×1017−49×1030=0
⇒ x=14×1017± (14)2×√1034+4×49×10302
=14×1017± √1034+4×49×10302
=28.00072×1017=14.00035×1017
= Increased in number of holes or the number of atoms of Boron added.
Now, 1386.035×1015 atoms are added per 5×1028 atoms of Si in 1m3.
∴ 1 atom of Boron is added per
5×10281386.035×1015
=3.607×10−3×1013
=3.607×1010