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Question

Estimate the proportion of boron impurity which will increase the conductivity of a pure silicon sample by a factor of 100. Assume that each boron atom creates a hole and the concentration of holes in pure silicon at the same temperature is 7×1015 holes per cubic metre. Density of silicon is 5×1028 atoms per cubic metre.

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Solution

Total number of charge carriers initially

=2×7×1015

=14×1015/Cubic meter

Finally the total number of charge carriers

=14×1017/m3

We know the product of the concentrations of holes and conduction electrons remains almost the same.

Let 'x' be the number of holes.

So, (7×1015)×(7×1015)

=x×(14×1017x)

14x×1017x2=49×1030

x214x×101749×1030=0

x=14×1017± (14)2×1034+4×49×10302

=14×1017± 1034+4×49×10302

=28.00072×1017=14.00035×1017

= Increased in number of holes or the number of atoms of Boron added.

Now, 1386.035×1015 atoms are added per 5×1028 atoms of Si in 1m3.

1 atom of Boron is added per

5×10281386.035×1015

=3.607×103×1013

=3.607×1010


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