For the NMOSFET in the circuit shown, the threshold voltage is VthwhereVth>0. The source voltage VSS is varied from 0toVDD. Neglecting the channel length modulation, the drain current ID as a function of VSS is represented by
A
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B
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C
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D
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Solution
The correct option is C Ans : (a)
VGS=VDS
Hence MOS transistor is in saturation.
In saturation, ID=k(VGS−VT)2=k(VDD−Vss–VT)2
As, Vss increases ID decreases (Not linearly because square factor )
Hence option (a) is correct.