(1) : n−type semiconductor is formed by doping a group 15 element in an intrinsic semiconductor whereas p−type semiconductor is formed by doping a group 13 element in the intrinsic semiconductor.
(2) : Elements like phosphorous, antimony etc are the doping elements in n−type semiconductor whereas gallium, aluminum etc. are the doping elements in p−type semiconductor.
(3) : Electrons are the majority charge carriers in n−type semiconductor whereas holes are the majority charge carriers in p−type semiconductor.
(4) : Electron density is much greater than the holes in n−type semiconductor whereas hole density is much greater than electrons in p−type semiconductor.