LED is fabricated by
(i) Heavy doping of both the p and n region.
(ii) Providing a transparent covers so that light comes out.
Working : When the diode is forward biased , electrons are sent from n→p and holes from p→n . At the junction boundary , the excess minority carriers on the either side of photon hν=Eg.
GaAs (Gallium Arsenide) : Band gap of semiconductors used to manufacture LED's should be 1.8eV to 3eV . These materials have band gap which is suitable to produce desired visible light wavelengths.
Advantages :
(i) Low operational voltage and less power consumption.
(ii) Fast action and no warm-up time required.
(iii) Long life and ruggedness.
(iv) Fast on-off switching capability.