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Question

Identify the mismatched pair from the following

A
zener diode : voltage regulator
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B
germanium doped with phosphorous : n-type semiconductor
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C
semiconductor : band gap > 3 eV
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D
p-n junction diode : rectifier
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E
silicon doped with aluminium : p-type semiconductor
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Solution

The correct option is C semiconductor : band gap > 3 eV
For semiconductor band gap is <3eV so given option is incorrect.
When zener dioode is operated in breakdown region, voltge across it remains constant even if current through it changes by large amount.
Germanium when doped with phosphorous forms n-type semiconductor and silicon when doped with aluminum forms p-type.
p-n junction can be used as half wave or full wave rectifier.

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