If a semiconductor has an intrinsic carrier concentration of 1.41×1016/m3, when doped with 1021/m3 phosphorous atoms, then the concentration of holes/m3 at room temperature will be :
A
2×1021
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B
2×1011
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C
1.41×1010
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D
1.41×1016
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Solution
The correct option is B1.41×1016 Doping will increase the number of electrons only and not the holes. So, number of holes will be equal to number of intrinsic carrier concentration. =1.41×1016/m3