If resistivity of pure silicon is 3000Ωm and the electron and hole mobilities are 0.12 m2V−1s−1 and 0.045 m2V−1s−1 respectively. The resistivity of a specimen of the material when 1019 atoms of Phosphorous are added per m3 is
5.21 Ωm
The resistivity of pure Si is given by
P=1σ=1e(neμe+nhμh)=1enh(μe+μh)Or nh=1eρ(μe+μh)=11.6×10−19×3000(0.12+0.045)=1.26×1016m−3
When 1019 atoms of phosphorous (donor atoms of valence five) are added per m3, the semiconductor becomes n – type semiconductor.
∴ne−nh≈ne=Nd=1019∵nh=1.26×1016Resitivity ρ=1neμe=11.6×10−19×1019×0.12=5.21Ωm