In 120ns pulse 10- 106 photons at a wavelength of 1200 nm fall on GaAs PIN photo detector an average 6- 106 electron hole pair are generated- The quantum efficiency in - is

Δ T=120ns= Pulse width λ =12.00nm r_p= photons generated =10× 10^6 r_e= electron hole pair generated =6× 10^6 quantum efficiency =r_er_p× 100 =6× 10^610× 10^6× ...

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Standard XI

Business Studies

India and the IT Industry

In 120ns puls...

Question

In $120 n s$ pulse $10 \times 10^{6}$ photons at a wavelength of $1200 n m$ fall on GaAs PIN photo detector an average $6 \times 10^{6}$ electron hole pair are generated. The quantum efficiency in $%$ is ______
60

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Solution

The correct option is A 60
$Δ T = 120 n s =$ Pulse width
$λ = 12.00 n m$
$r_{p} =$ photons generated $= 10 \times 10^{6}$
$r_{e} =$ electron hole pair generated $= 6 \times 10^{6}$
quantum efficiency $= \frac{r_{e}}{r_{p}} \times 100$
$= \frac{6 \times 10^{6}}{10 \times 10^{6}} \times 100$
$η = 60 %$

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In 120ns pulse 10×106 photons at a wavelength of 1200 nm fall on GaAs PIN photo detector an average 6×106 electron hole pair are generated. The quantum efficiency in % is ______60

The correct option is A 60ΔT=120ns= Pulse width λ=12.00nm rp= photons generated =10×106 re= electron hole pair generated =6×106 quantum efficiency =rerp×100 =6×10610×106×100 η=60%

In $120 n s$ pulse $10 \times 10^{6}$ photons at a wavelength of $1200 n m$ fall on GaAs PIN photo detector an average $6 \times 10^{6}$ electron hole pair are generated. The quantum efficiency in $%$ is ______
60