In a bipolar junction transistor (BJT)

The base has the least concentration of impurity

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The emitter has least concentration of impurity

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All the three regions have equal concentration of impurity

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The collector has least concentration of impurity

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Solution

The correct option is A The base has the least concentration of impurity
In a transistor base has least concentration of impurity. Emitter is heavily doped

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Similar questions

α = 0.98

I_{B} = 25 μ A

I_{C B O} = 200 n A

A Bipolar junction transistor has α = 0.98

I_{B} = 25 μ A and I_{C B O} = 200 n A

PN

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