Question

In a forward biased p- n junction diode, the potential barrier in the depletion region is of the form:

• A.
• B.
• C.
• D.

Answer 1

The correct option is C

When we add p type material to an n type material, the charges distribute as shown below.


Hence the potential on the n side is more than the potential on the p side. In the forward biased condition, the potential barrier decreases till the potential on n side is more than that on p side.
Hence option c matches our explaination.