In a pn junction a) high potential at n side and a low potential at p side b) high potential at p side and a low potential at n side c) p and n both are at the same potential d) undetermined
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Solution
Option (a) is correct.
The natural potential that develops spontaneously across a PN junction is due to the diffusion of charge carriers across the junction. P type material has "holes" in its bond structure that can be "filled" by accepting electrons, while the N side has more than enough conduction electrons to satisfy its bond requirements. However, every electron that crosses over leaves a small net positive charge in the N material, while the P side gains a small negative charge. These charges build up until they suppress further movement - they raise a potential barrier against further diffusion of charges. This is what leads to the "turn on" bias requirement to get current moving across the junction (about 0.7V for silicon PN junctions).