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Question

In a Zener diode, break down occurs in reverse bias due to

A
Impact ionization
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B
Internal field emission
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C
High doping concentration
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D
All of these
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Solution

The correct option is C High doping concentration

Due to high doping concentration, break down occurs in reversed biased zener diode. High doping concentration is also responsible for thin depletion region and high internal electric field.

Hence, option (C) is correct.

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