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Intrinsic Semiconductor

In an intrins...

Question

In an intrinsic semiconductor, the density of conduction electrons is $7.07 \times 10^{15} m^{- 3}$ . When it is doped with indium, the density of holes becomes $5 \times 10^{22} m^{- 3}$ . Find the density of conduction electrons in doped semiconductor

Z e r o

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1 \times 10^{9} m^{- 3}

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7 \times 10^{15} m^{- 3}

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5 \times 10^{22} m^{- 3}

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Solution

The correct option is A $Z e r o$
The calculation of the electron density starts by assuming that the semiconductor is neutral so that there is a zero charge density in the material. The hole concentration in equilibrium is written as a function of the electron density by using the mass action law. $0$

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Similar questions

A pure semiconductor has equal electron and hole concentration of $10^{16} m^{- 3}$ . Doping by indium increases $n_{h}$ to $4.5 \times 10^{22} m^{- 3} . W h a t i s t h e v a l u e o f$ n_e$ in the doped semiconductor?

Q. Pure Si at

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has equal number of electrons

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and hole

(n_{h})

concentrations of

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n_{h} t o 4.5 \times 10^{22} m^{- 3}

. The doped semiconductor is of :

Q. Pure

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and hole

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concentration of

1.5 \times 10^{16} m^{- 3}

. Doping by indium increases

n_{h}

4.5 \times 10^{22} m^{- 3}

. The doped semiconductor is of

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10^{18} / m^{3}

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10^{24} / m^{3}

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In an intrinsic semiconductor, the density of conduction electrons is 7.07×1015m−3. When it is doped with indium, the density of holes becomes 5×1022m−3. Find the density of conduction electrons in doped semiconductor

The correct option is A ZeroThe calculation of the electron density starts by assuming that the semiconductor is neutral so that there is a zero charge density in the material. The hole concentration in equilibrium is written as a function of the electron density by using the mass action law.0

In an intrinsic semiconductor, the density of conduction electrons is $7.07 \times 10^{15} m^{- 3}$ . When it is doped with indium, the density of holes becomes $5 \times 10^{22} m^{- 3}$ . Find the density of conduction electrons in doped semiconductor