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Byju's Answer
Standard XII
Physics
EMF and EMF Devices
In an n-p-n t...
Question
In an n-p-n transistor:
A
the emitter has higher degree of doping compared to that of the collector
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B
the collector has higher degree of doping compared to that of the emitter
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C
both emitter and collector have same degree of doping
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D
the base region is most heavily doped
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Solution
The correct option is
A
the emitter has higher degree of doping compared to that of the collector
Irrespective of n-p-n and p-n-p type, the emitter of a transistor is doped heavily and the collector of the transistor is doped moderately.
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Similar questions
Q.
In n-p-n transistor, in CE configuration, identify true statements from the following :
(a) The emitter is heavily doped than the collector
(b) Emitter and collector can be interchanged
(c) The base region is very thin but is heavily doped
(d) The conventional current flows from base to emitter
Q.
Define common emitter output characteristic for a transistor. Draw a circuit diagram for studying the characteristics of n-p-n transistor in common emitter configuration.
Among emitter, base and collector regions of a transistor which one is:
(a) largest in size and (b) most heavily doped?
Q.
For transistor action, state which statements are true:
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse biased
(4) Both the emitter-base junction as well as the base-collector junction are forward biased
Q.
Match List-1 with list-2
List-1
List-2
A. Emitter
E. Transistor
B. Base
F. Moderately doped
C. Collector
G. Lightly doped
D. Transfer of resistance
H. Heavily doped
I. largest physical size
Q.
In a transistor the base is very lightly doped as compared to the emitter because by doing so
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