Question

In an n-type semiconductor, the donor energy level lies

• A. At the center of the energy gap
• B. Just below the conduction band
• C. Just above the valence band
• D. In the conduction band

Answer 1

The correct option is B

Just below the conduction band

Explanation for correct option:

Option (b) just below the conduction band

N-type semiconductor:

1. An N-type semiconductor is a semiconductor material with impurities that are utilized in electronics.
2. To make n-type semiconductors, pentavalent impure atoms such as Phosphorus ($\mathrm{P}$), Arsenic ($\mathrm{As}$), Antimony ($\mathrm{Sb}$), Bismuth ($\mathrm{Bi}$), or another chemical element are employed.
3. As they provide free electrons to a semiconductor, these impure atoms are known as donor impurities.
4. Doping increases the number of charge carriers available for conduction in the material.
5. An n-type semiconductor has a far higher conductivity than pure silicon or germanium.
6. In an n-type semiconductor, the donor energy level lies just below the conduction band near the fermi level of the semiconductor.

Hence, Option (b) is correct.