Question

In $n-p-n$ transistor, if doping in base region is increased then collector current

• A. remains same
• B. increases
• C. decreases
• D. None of the above.

Answer 1

The correct option is C decreases

When the doping in the base region is increased, the number of holes in the base region increases.

Therefore, recombination of electrons and holes are also increases in this region.

As a result, the number of electron crossing over the base decreases.

Thus, $I_C\left(\text{Collector current}\right)$ decreases.

Hence, option $\left(C\right)$ is correct.