In n-p-n transistor, in CE configuration, identify true statements from the following :
(a) The emitter is heavily doped than the collector
(b) Emitter and collector can be interchanged
(c) The base region is very thin but is heavily doped
(d) The conventional current flows from base to emitter

(a) and (b) are correct

No worries! We‘ve got your back. Try BYJU‘S free classes today!

(a) and (c) are correct

No worries! We‘ve got your back. Try BYJU‘S free classes today!

(a) and (d) are correct

Right on! Give the BNAT exam to get a 100% scholarship for BYJUS courses

(b) and (c) are correct

No worries! We‘ve got your back. Try BYJU‘S free classes today!

Open in App

Solution

The correct option is C (a) and (d) are correct
In n-p-n transistor, in CE configuration, the emitter is heavily doped than the collector and the conventional current flows from base to emitter(since current flows from p region to n region in forward bias).

Suggest Corrections

Similar questions

For transistor action, which of the following statements are correct:

(a) Base, emitter and collector regions should have similar size and doping concentrations.

(b) The base region must be very thin and lightly doped.

(d) Both the emitter junction as well as the collector junction are forward biased.

Q. Define common emitter output characteristic for a transistor. Draw a circuit diagram for studying the characteristics of n-p-n transistor in common emitter configuration.
Among emitter, base and collector regions of a transistor which one is:
(a) largest in size and (b) most heavily doped?

When is a transistor said to be in active state? Draw a circuit diagram of a p-n-p transistor and explain how it works as a transistor amplifier. Write clearly, why in the case of a transistor (i) the base is thin and lightly doped and (ii) the emitter is heavily doped.

Q.
Match List-1 with list-2

List-1	List-2
A. Emitter	E. Transistor
B. Base	F. Moderately doped
C. Collector	G. Lightly doped
D. Transfer of resistance	H. Heavily doped I. largest physical size

Q. For a p-n-p transistor in CB configuration, the emitter current

I_{E}

1 m A

and

α

=

0.95

. The base current and collector current are

Join BYJU'S Learning Program

In n-p-n transistor, in CE configuration, identify true statements from the following :(a) The emitter is heavily doped than the collector(b) Emitter and collector can be interchanged(c) The base region is very thin but is heavily doped(d) The conventional current flows from base to emitter

The correct option is C (a) and (d) are correctIn n-p-n transistor, in CE configuration, the emitter is heavily doped than the collector and the conventional current flows from base to emitter(since current flows from p region to n region in forward bias).

In n-p-n transistor, in CE configuration, identify true statements from the following :
(a) The emitter is heavily doped than the collector
(b) Emitter and collector can be interchanged
(c) The base region is very thin but is heavily doped
(d) The conventional current flows from base to emitter

The correct option is C (a) and (d) are correct
In n-p-n transistor, in CE configuration, the emitter is heavily doped than the collector and the conventional current flows from base to emitter(since current flows from p region to n region in forward bias).