Mark the wrong statement.

A p-n junction can act as a semiconductor diode

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The majority carrier in p-type semiconductors are electrons

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Doping pure silicon with pentavalent impurities give n-type semiconductor

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The resistance of intrinsic semiconductor decreases with increases in temperature

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Solution

The correct option is B The majority carrier in p-type semiconductors are electrons
The majority carriers p-type semiconductors are holes. So, the option(b) is wrong one.

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Similar questions

Silicon doped with electron-rich impurity forms .................

(a) P-type semiconductor (b) n-type semiconductor

Which of the following statements are true about semiconductors ?

(a) Silicon doped with electron rich impurity is a p-type semiconductor

(b) Silicon doped with an electron rich impurity is an n-type semiconductor

(d) An electron vacancy increases the conductivity of n-type semiconductor

n - t y p e

n - t y p e

(P)

(O)

(R)

(S)

(T)

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