Question

Match List-1 with List-2

List-1	List-2
A. Intrinsic semiconductor	E. Donor level
B. N-type semiconductor	F. Acceptor level
C. p-type semiconductor	G. Immobile ions
D. Depletion layer	H. Fermi energy levels is at the centre of forbidden energy gap I. Fermi energy level is near the conduction band

• A. A-F B-E,G C-H D-I
• B. A-H B-E,I C-F D-G
• C. A-E B-F C-G D-H,I
• D. A-I B-H C-G D-E,F

Answer 1

Answer: (B)

A-H B-E,I C-F D-G

Intrinsic semiconductors have Fermi level at the center of the energy gap. Hence there are no excess electrons or holes. Under thermal energy provided to the material, atoms break apart into electrons and hole to gain energy to reach conduction band and valence band, respectively.

N-type semiconductors are those that have excess of electrons. Hence the donor atoms are doped in the structure of an intrinsic semiconductors such that the electrons lie in donor level.

P-type semiconductors are those that have excess of holes. Hence the acceptor atoms are doped in the structure of an intrinsic semiconductors such that the holes lie in acceptor level.

The depletion region refers to a region where flow of charge carriers are decreased over a given time and finally results in empty mobile charge carriers or full of immobile charge carriers.