Match the following -A Forbidden energy gap - E 10-6 m of a semiconductor - F1 MeVillhlineC Width of depletion layer - H 1 eVlithlineD Forward voltage of silicon diode - I 0-3 Vilthline lend array A- A-I- B-H- C-E- D-GB- A-H- B-I- C-E- D-GC- A-H- B-I-C-F- D-ED- A-F- B-I- C-E- D-G

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Standard XII

Physics

Energy Band Diagrams

Match the fol...

Question

Match the following :

$\begin{matrix} L i s t - I & L i s t - I I A) F o r b i d d e n e n e r g y g a p & E) 10^{- 6} m o f a s e m i c o n d u c t o r & F) 1 M e V B) K n e e v o l t a g e o f g e r m a n i u m & G) 0.7 V d i o d e C) W i d t h o f d e p l e t i o n l a y e r & H) 1 e V D) F o r w a r d v o l t a g e o f s i l i c o n d i o d e & I) 0.3 V \end{matrix}$

A–I, B–H, C–E, D–G

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A–H, B–I, C–E, D–G

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A–H, B–I,C–F, D–E

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A–F, B–I, C–E, D–G

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Solution

The correct option is B
A–H, B–I, C–E, D–G

Conceptual

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Match the following : List−IList−IIA)Forbidden energy gapE)10−6mof a semiconductorF)1 MeVB)Knee voltage of germaniumG)0.7VdiodeC)Width of depletion layerH)1eVD)Forward voltage of silicon diodeI)0.3V

The correct option is B A–H, B–I, C–E, D–G Conceptual

The correct option is B
A–H, B–I, C–E, D–G

Conceptual