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Byju's Answer
Standard XII
Physics
Extrinsic Semiconductors
On doping ger...
Question
On doping germanium with donor atoms of density
10
17
c
m
−
3
its conductivity in
m
h
o
/
c
m
will be
[Given:
μ
e
=
3800
c
m
2
/
V
−
s
and
n
i
=
2.5
×
10
13
c
m
−
3
]
A
30.4
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B
60.8
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C
91.2
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D
121.6
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Solution
The correct option is
A
60.8
Conductivity,
σ
=
n
i
e
μ
e
=
10
17
×
(
1.6
×
10
−
19
)
×
3800
=
60.8
m
h
o
/
c
m
.
Suggest Corrections
0
Similar questions
Q.
On doping germanium with donor atoms density of
10
17
c
m
−
3
its conductivity in mho/cm will be
(Given
μ
e
=
3800
c
m
2
/
V
−
s
and
n
i
=
2.5
×
10
13
c
m
−
13
)
Q.
The electron mobility in N-type germanium is
3900
cm
2
/
v
−
s
and its conductivity is
6.24
mho
/
cm
; If the effect of cotters is negligible, then the impurity concentration will be
Q.
Calculate the resistivity of an n-type semiconductivity from the following data: density of conduction electrons =
8
×
10
13
c
m
−
3
, density of holes
=
5
×
10
12
c
m
−
3
, mobility of conduction electron in
=
2.3
×
10
4
c
m
2
V
−
1
s
−
1
and mobility of holes
=
100
c
m
2
V
−
1
s
−
1
.
Q.
The intrinsic charge carrier density in germanium crystal at
300
K
i
s
2.5
×
10
13
/
c
m
3
. density in an n-type germanium crystal at 300 K be
5
×
10
16
/
c
m
3
,the hole density in this n-type crystal at 300 K would be
Q.
What is the conductivity of a semiconductor if electron density
=
5
×
10
12
/
c
m
3
and hole density
=
8
×
10
13
/
c
m
3
(
μ
e
=
2.3
m
2
V
−
1
s
−
1
,
μ
h
=
0.01
m
2
V
−
1
s
−
1
)
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