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V-I Characteristics for a P-N Junction Diode

why emitter r...

Question

why emitter region is heavily doped while collector lightly doped

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Solution

The Function of emitter is to provide charge carriers , hence it is doped heavily so that it can provide more charge carriers and also the collector region is moderately doped so that it can collect the carriers.

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Q.
Match List-1 with list-2

List-1	List-2
A. Emitter	E. Transistor
B. Base	F. Moderately doped
C. Collector	G. Lightly doped
D. Transfer of resistance	H. Heavily doped I. largest physical size

Q. In n-p-n transistor, in CE configuration, identify true statements from the following :
(a) The emitter is heavily doped than the collector
(b) Emitter and collector can be interchanged
(c) The base region is very thin but is heavily doped
(d) The conventional current flows from base to emitter

Q. The heavily and lightly doped regions of a bipolar junction transistor are respectively

Q. For transistor action, state which statements are true:
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be very thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse biased
(4) Both the emitter-base junction as well as the base-collector junction are forward biased

What happens to width of depletion layer when diode is heavily doped and lightly doped?

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V-I Characteristics for a P-N Junction Diode

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