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Byju's Answer
Standard XII
Physics
Extrinsic Semiconductors
Pure Se at ...
Question
Pure
S
e
at 300K has equal electron
(
n
e
)
and hole
(
n
h
)
concentration of
1.5
×
10
6
m
−
3
. Doping by indium increases
n
h
=
4.5
×
10
22
m
−
3
. Calculate the doped silicon.
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Solution
Here
n
1
=
1.5
×
10
16
m
−
3
,
n
h
=
4.5
×
10
22
m
−
3
Now
n
h
n
e
=
n
i
2
or
n
e
=
n
i
2
n
h
=
(
1.5
×
10
16
)
2
4.5
×
10
22
=
5
×
10
9
m
−
3
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0
Similar questions
Q.
Pure Si at
300
K
has equal electron
(
n
e
)
and hole
(
n
h
)
concentrations of
1.5
×
10
16
m
−
3
. Doping by indium increases
n
h
to
4.5
×
10
22
m
−
3
. Calculate
n
e
in the doped Si.
Q.
Pure Si at
300
K
has equal electron and hole concentration of
1.5
×
10
16
/
m
3
. Doping by indium increases
n
h
to
4.5
×
10
22
/
m
3
. What is
n
e
in doped silicon?
Q.
Pure Si at
500
K
has equal number of electrons
(
n
e
)
and hole
(
n
h
)
concentrations of
1
.
5
×
10
16
m
−
3
. Doping by indium increases
n
h
t
o
4
.
5
×
10
22
m
−
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. The doped semiconductor is of :
Q.
Pure Si at
300
K
has equal electron and hole concentration of
1.5
×
10
16
/
m
3
. Doping by indium increases
n
h
to
4.5
×
10
22
/
m
3
. What is
n
e
in doped silicon?
Q.
Pure Si at 500 K has equal number of electron
(
n
e
)
and hole
(
n
h
)
concentrations of
1.5
×
10
16
m
−
3
. Doping by indium increases
n
h
to
4.5
×
10
22
m
−
3
. The doped semiconductor is of :
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