Pure Si at 500K has equal number of electrons(ne) and hole (nh) concentrations of 1.5×1016m−3. Doping by indium increases nhto4.5×1022m−3. The doped semiconductor is of :
A
n-type with electron concentration ne=5×1022m−3
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B
p-type with electron concentration ne=2.5×1023m−3
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C
n-type with electron concentration ne=2.5×1010m−3
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D
p-type with electron concentration ne=5×109m−3
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Solution
The correct option is D p-type with electron concentration ne=5×109m−3 We know that n2i=nenh⇒ne=(ni)2nh⇒ne=(1.5×1016)2(4.5×1022)⇒ne=5×109m−3Sonh>ne Therefore semiconductor is p-type.