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Question

Pure Si at 500 K has equal number of electrons(ne) and hole (nh) concentrations of 1.5×1016 m3. Doping by indium increases nh to 4.5×1022 m3. The doped semiconductor is of :

A
n-type with electron concentration ne=5×1022 m3
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B
p-type with electron concentration ne=2.5×1023 m3
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C
n-type with electron concentration ne=2.5×1010 m3
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D
p-type with electron concentration ne=5×109 m3
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