Si of high purity to be used in semiconductor can be prepared by following methods -I- SiO2 - 2C - Si - 2COII- Si - 2Cl2 - SiCl4 SiCl4 - 2Mg - Si - 2MgCl2Better method is -

The correct option is A IISi of nbsp; high purity to be used in semiconductor can be prepared nbsp; by the reaction of Si with chlorine to form SiCl_4 ...

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Byju's Answer

Standard XII

Chemistry

Zone Refining

Si of high pu...

Question

Si of high purity to be used in semiconductor can be prepared by following methods :
I. $S i O_{2} + 2 C \to S i + 2 C O$
II. $S i + 2 C l_{2} \to S i C l_{4}$
$S i C l_{4} + 2 M g \to S i + 2 M g C l_{2}$
Better method is :

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both (A) and (B)

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None of these

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Solution

The correct option is A II
Si of high purity to be used in semiconductor can be prepared by the reaction of Si with chlorine to form $S i C l_{4}$ followed by fractional distillation (to purify $S i C l_{4}$ ) and reduction with hydrogen. Zone refining is used for the further purification.
$S i + 2 C l_{2} \to S i C l_{4} (l) 2 H_{2} (g) - --- \to S i (s) + 4 H C l (g) Z o n e r e f i n i n g - ------- \to U l t r a p u r e s i l i c o n$

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Similar questions

Q. Assertion :

M g O

is reduced by

S i

whereas

S i O_{2}

can be reduced by

M g

Reason:

S i

reduces

M g O

at high temperature

M g

is more electropositive than

S i

and thus reduces

S i O_{2}

Q. The

S i C l_{4}

molecule is nonpolar and chlorine is more electronegative than silicon. From this information alone it can be deduced that :
(1)

S i - C l

bond is nonpolar
(2)

S i C l_{4}

molecule is planar
(3)

S i C l_{4}

molecule is symmetrical

S i O_{2} + 3 C ⟶ 2 C O +

________

Q. Si

O_{2}

+ 2Mg

h e a t - - \to

___ + ___

S i (s) + 2 C l_{2} (g) \to S i C l_{4} (l)

In one reaction, 0.507 mole of

S i C l_{4}

is produced how many moles of molecular chlorine were used in the reaction?

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Si of high purity to be used in semiconductor can be prepared by following methods :I. SiO2+2C→Si+2COII. Si+2Cl2→SiCl4SiCl4+2Mg→Si+2MgCl2Better method is :

Si of high purity to be used in semiconductor can be prepared by following methods :
I. $S i O_{2} + 2 C \to S i + 2 C O$
II. $S i + 2 C l_{2} \to S i C l_{4}$
$S i C l_{4} + 2 M g \to S i + 2 M g C l_{2}$
Better method is :