An n-type semiconductor sample is doped with 1015 donor atoms/cm3. The applied electric field is 1V/cm. If the current density produced inside the sample is 60 mA/cm2. Then the mobility of the electrons inside the n-type sample is
A
200cm2/V−sec
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B
312cm2/V−sec
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C
187.5cm2/V−sec
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D
375cm2/V−sec
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