An p- n junction at zero bias and T-300 K has dopant concentration of NA-1017cm-3 and Np-2-1614cm-3- Then the fermi level in n-side above the intrinsic fermi level iseVAssume ni-1-5-1010cm-3-VT-26mV

Given, Dopant concentrations are N_A=10^17cm^ 3 N_D=2×10^14cm^ 3 ∴ E_Fn E_fi=V_T In(N_Dn_i)=26×10^ 3In(2×10^141.5×10^10) E_Fn E_Fi=0.247eV ...

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Electrochemical Series

An p+ n junct...

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$An p^{+} n junction at zero bias and T=300 K has dopant concentration of N_{A} = 10^{17} c m^{- 3} and N_{p} = 2 \times 16^{14} c m^{- 3} . Then the fermi level in n-side above the intrinsic fermi level is______eV (Assume n_{i} = 1.5 \times 10^{10} c m^{- 3}, V_{T} = 26 m V)$

0.247

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Assume n_{i} = 1.5 \times 10^{10} c m^{- 3}

p - n

N_{A} = 2 \times 10^{16} c m^{- 3}

N_{D} = 2 \times 10^{15} c m^{- 3}

T - 300^{\circ} K

V_{R} = 9

\times 10^{4} V / c m . (ε_{s i} = 11.7 \times 8.85 \times 10^{- 14} F / c m, V_{T} = 25.9 m V, n_{i} = 1.5 \times 10^{10} / c m^{3})

1 \times 10^{16} c m^{- 3}

1 \times 10^{17} c m^{- 3}

0.3 V

T = 300 K

n_{i} = 1.5 \times 10^{10} c m^{- 3}

\frac{k T}{q} = 26 m V

An abrupt Si p-n junction has doping conncentration on p-side and n-side as N_{A} = 10^{18} / c m^{3} and N_{D} = 5 \times 10^{15} / c m^{3} respectively. Then the contact potential at the junction is (Assume intrinsic carrier concentration, n_{i} = 1.0 \times 10^{10} / c m^{3}, and k T = 0.026 V)

4 \times 10^{17} a t o m s / c m^{3}

1.5 \times 10^{10} / c m^{3}

k T / q

25 m V

300 K

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