wiz-icon
MyQuestionIcon
MyQuestionIcon
15
You visited us 15 times! Enjoying our articles? Unlock Full Access!
Question

The breakdown in a reverse biased p-n junction diode is more likely to occur due to.

A
large velocity of the minority charge if the doping concentration is small.
Right on! Give the BNAT exam to get a 100% scholarship for BYJUS courses
B
large velocity of the minority charge carriers if the doping concentration is small.
No worries! We‘ve got your back. Try BYJU‘S free classes today!
C
strong electric field in a depletion region if the doping concentration is small.
No worries! We‘ve got your back. Try BYJU‘S free classes today!
D
strong electric filed in the deplention region if the doping conentration is large.
No worries! We‘ve got your back. Try BYJU‘S free classes today!
Open in App
Solution

The correct option is A large velocity of the minority charge if the doping concentration is small.
When it comes to he breakdown in a reverse biased PN junction diode, it will probably happen only because of the accumulation of the higher charge at the biased region and large velocity of the minority charge if the doping concentration is small. This is the main cause the breakdown

flag
Suggest Corrections
thumbs-up
0
similar_icon
Similar questions
Join BYJU'S Learning Program
similar_icon
Related Videos
thumbnail
lock
Opto-Electronic Devices
PHYSICS
Watch in App
Join BYJU'S Learning Program
CrossIcon