The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called

Avalanche breakdown

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breakdown by tunnelling

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Zener breakdown

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high voltage breakdown

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Solution

The correct option is A Avalanche breakdown
Avalanche breakdown occurs in lightly-doped p-n junctions where the depletion region is comparatively long and the reverse voltage increases beyond 5 V.

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Similar questions

Q. Draw diagram for a P-N junction to obtain reverse bias characteristic curves. Explain the phenomenon of reverse breakdown for a P-N junction in reserve bias state by following processes-
(i) Avalanche breakdown
(ii) Zener breakdown

Q. The breakdown in a reverse biased p-n junction diode is more likely to occur due to.

Draw V-I characteristics of a p-n junction diode. Answer the following questions, giving reasons :
(i) Why is the current under reverse bias almost independent of the applied potential upto a critical voltage?
(ii) Why does the reverse current show a sudden increase at the critical voltage?
Name any semiconductor device which operates under the reverse bias in the breakdown region.

For transistor action, which of the following statements are correct:

(a) Base, emitter and collector regions should have similar size and doping concentrations.

(b) The base region must be very thin and lightly doped.

(d) Both the emitter junction as well as the collector junction are forward biased.

Q. In

P - N

junction under the condition of reverse bias the electric field is max at,

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The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called

The correct option is A Avalanche breakdownAvalanche breakdown occurs in lightly-doped p-n junctions where the depletion region is comparatively long and the reverse voltage increases beyond 5 V.

The correct option is A Avalanche breakdown
Avalanche breakdown occurs in lightly-doped p-n junctions where the depletion region is comparatively long and the reverse voltage increases beyond 5 V.