The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be
1 mA at a drain-source voltage of 5V. When the drain to source voltage was increased to
6 V while keeping gate-source voltage same, the drain current increased to
1.02 mA. Assume the drain to source saturation voltages is much smaller than the applied drain –source voltage, The channel length modulation parameter
λ (in
V−1)is
- 0.02