The cut-off wavelength $(i n μ m)$ of light that can be used for intrinsic excitation of a semiconductor material of bandgap $E_{g} = 1.1 e V$ is

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Solution

Ans : (1.12 to 1.12)

$λ_{c} = \frac{1.24}{E_{g} (e V)} μ m = \frac{1.24}{1.1} μ m λ_{c} = 1.12 μ m$

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The cut-off wavelength (inμm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap Eg=1.1 eV is

Ans : (1.12 to 1.12) λc=1.24Eg(eV)μm=1.241.1μmλc=1.12 μm

The cut-off wavelength $(i n μ m)$ of light that can be used for intrinsic excitation of a semiconductor material of bandgap $E_{g} = 1.1 e V$ is

Ans : (1.12 to 1.12)

$λ_{c} = \frac{1.24}{E_{g} (e V)} μ m = \frac{1.24}{1.1} μ m λ_{c} = 1.12 μ m$